Imbg120r060m1h datasheet
WitrynaFind the best pricing for Infineon IMBG120R060M1HXTMA1 by comparing bulk discounts from 5 distributors. Octopart is the world's source for IMBG120R060M1HXTMA1 availability, pricing, and technical specs and other electronic parts. WitrynaIMBG120R060M1H 数据表 (PDF) - Infineon Technologies AG. 部件名. IMBG120R060M1H. 下载. IMBG120R060M1H Click to view. 文件大小. 1264.77 …
Imbg120r060m1h datasheet
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WitrynaAbout Infineon Technologies AG. Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, … WitrynaFinal Datasheet Please read the Important Notice and Warnings at the end of this document 2.1 www.infineon.com page 1 of 17 2024-09-01 IMBG120R060M1H …
WitrynaIMBG120R060M1H, SP004363744. Technisches Datenblatt: IMBG120R060M1HXTMA1 Datasheet Technische Dokumentation anzeigen. Produktsortimentsauswahl (CoolSiC) Alle Produkte dieses Sortiments anzeigen. Produktbeschreibung. Hinweise. Market demand for this product has caused an extension in leadtimes. Delivery dates may … WitrynaDatasheet 5 of 17 v01_00 2024-03-09 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at T vj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Unit min. typ. max. Drain-source on-state resistance2 R …
Witryna12M1H090 Marking, 12M1H090 Datasheet Search Engine. 12M1H090 Specifications. alldatasheet, free, Datasheets, databook. 12M1H090 data sheet, manual, 12M1H090 parts ... WitrynaFinal Datasheet Please read the Important Notice and Warnings at the end of this document 2.2 www.infineon.com page 1 of 17 2024-12-11 IMBG120R060M1H IMBG120R060M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features Very low switching losses Short circuit withstand time 3 µs Fully …
WitrynaDatasheet 5 of 17 2.2 2024-12-11 IMW120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static …
WitrynaBuy IMBG120R060M1HXTMA1 - Infineon - Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.06 ohm, TO-263 (D2PAK). Farnell Israel offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support. hotel kyriad saint maloWitrynaDatasheet 5 of 17 2.2 2024-12-11 IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static … hotel kyriad saint malo bookingWitrynaIMBG120R060M1H IMBG120R060M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features Very low switching losses Short circuit withstand time 3 µs Fully controllable dV/dt Benchmark gate threshold voltage, VGS(th) = 4.5V Robust against parasitic turn on, 0V turn-off gate voltage can be applied Robust body … hotel kyriad saint malo vue merWitrynaBuy IMBG120R060M1HXTMA1 - Infineon - Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.06 ohm, TO-263 (D2PAK). Farnell Nederland offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support. hotel kyriad ussacWitrynaIMBG120R060M1H CoolSiC#8482; 1200 V SiC Trench MOSFET in TO-263-7 package. The CoolSiC#8482; 1200 V, 60 m#937; SiC MOSFET in a D2PAK-7L (TO-263-7) … hotel kyrimai mani peloponnes griechenlandWitrynaDatasheet highlights M1H series 7-9 May 2024 7 Maximum R DS(on) @ V gs,on = 15, 18 V Increased max. gate-source voltage › V gs,on = 18 V –Highest power handling capability through lower RDSon › V gs,on = 15 V –Comes with short-circuit capability 3µs for designs having such requirement › 5 V margin between recommended V gs and … hotell 33 palma novaWitrynaInfineon Technologies. Manufacturer Product Number. IMBG120R030M1HXTMA1. Description. SICFET N-CH 1.2KV 56A TO263. Detailed Description. N-Channel 1200 … hotel kyriad saint quentin 02100